Siping Wang

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Tapered Phononic Crystal SAW Resonator in GaN

IEEE MEMS

Jan 2015

This paper presents a new Phononic Crystal (PnC) resonator design in which a tapered PnC is used to confine a 970 MHz SAW resonance in a GaN-on-Si platform. Like other SAW resonator designs, the proposed resonator eliminates the release step common to most MEMS devices, leading to higher yield and simpler design and packaging. However, the use of a tapered PnC reflector in this work reduces the footprint of SAW resonators by > 100 times relative to conventional metal grating reflectors while maintaining high Q. A 3.5 times improvement in Q is experimentally demonstrated relative to resonators with uniform PnC reflectors of comparable dimensions. These devices can be integrated seamlessly with GaN MMIC technology.

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GaN MEMS Resonator Using a Folded Phononic Crystal Structure

Hilton Head SolidState Sensors Actuators and Microsystems Workshop at Hilton Head SC

Jun 2013

We present a Gallium Nitride (GaN) Lamb Wave resonator using a Phononic Crystal (PnC) to selectively confine elastic vibrations with wide-band spurious mode suppression. A unique feature of the design demonstrated here is a folded PnC structure to relax energy confinement in the non-resonant dimension and to enable routing access of piezoelectric transducers inside the resonant cavity. This provides a clean spectrum over a wide frequency range and improved series resistance relative to transmission line or tethered resonators by allowing a low-impedance path for drive and sense electrodes. GaN resonators are demonstrated with wide-band suppression of spurious modes, f.Q product up to 3.06 times10 to the power 12, and resonator coupling coef

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Temperature Coefficient of Frequency Modeling for CMOS-MEMS Bulk Mode Composite Resonator

IEEE TRANSCTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL

I

PIEZOELECTRIC NONLINEARITY IN GAN LAMB MODE RESONATORS

IEEE th International Conference on SolidState Sensors Actuators and Microsystems Transducers

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